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高壓放大器在聚醚酰亞胺薄膜電滯回線和擊穿場強測試中的應用

作者:Aigtek 閱讀數:0 發布時間:2024-12-02 18:01:31

  實驗名稱:聚醚(mi)酰亞(ya)胺薄膜電(dian)滯回線(xian)和擊穿場(chang)強測試

  研究方向:為了(le)應對(dui)全球能源(yuan)短(duan)缺(que)、氣候變化及大(da)氣污染等問題(ti)(ti),太陽能、風能和(he)熱能等新(xin)能源(yuan)發(fa)電(dian)(dian)(dian)技(ji)(ji)(ji)術(shu)應運而生。但由于新(xin)能源(yuan)發(fa)電(dian)(dian)(dian)具有間(jian)歇(xie)性、不(bu)穩(wen)定(ding)性等問題(ti)(ti),難以直接(jie)(jie)接(jie)(jie)入大(da)電(dian)(dian)(dian)網,因而亟需(xu)大(da)型的電(dian)(dian)(dian)能轉換和(he)電(dian)(dian)(dian)能存(cun)儲裝置。另外(wai),脈沖(chong)功率技(ji)(ji)(ji)術(shu)、電(dian)(dian)(dian)磁(ci)彈(dan)射技(ji)(ji)(ji)術(shu)、高壓(ya)柔性直流(liu)輸電(dian)(dian)(dian)技(ji)(ji)(ji)術(shu)、電(dian)(dian)(dian)動汽車(che)技(ji)(ji)(ji)術(shu)等在發(fa)展中均對(dui)高功率密度電(dian)(dian)(dian)能存(cun)儲裝置提(ti)出(chu)了(le)急迫需(xu)求(qiu)。

  聚(ju)合物基(ji)介(jie)電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)作(zuo)為一(yi)種(zhong)高(gao)(gao)(gao)功(gong)率(lv)密(mi)度(du)(du)(du)的(de)(de)(de)儲(chu)能(neng)(neng)(neng)器(qi)件,在新(xin)能(neng)(neng)(neng)源(yuan)、脈(mo)(mo)沖功(gong)率(lv)、電(dian)(dian)(dian)(dian)(dian)力電(dian)(dian)(dian)(dian)(dian)子和(he)(he)高(gao)(gao)(gao)壓(ya)直流輸電(dian)(dian)(dian)(dian)(dian)等行業都具有廣泛(fan)的(de)(de)(de)應(ying)用。目前商用的(de)(de)(de)聚(ju)合物電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)薄膜(mo)(mo)由(you)(you)于(yu)其(qi)介(jie)電(dian)(dian)(dian)(dian)(dian)常數較小(xiao),儲(chu)能(neng)(neng)(neng)密(mi)度(du)(du)(du)偏低,往(wang)往(wang)使得其(qi)在設(she)(she)備(bei)中占(zhan)據較大的(de)(de)(de)體(ti)(ti)積。另一(yi)方面,隨著電(dian)(dian)(dian)(dian)(dian)氣絕緣技術(shu)向(xiang)著高(gao)(gao)(gao)溫(wen)方向(xiang)發(fa)展,對于(yu)介(jie)電(dian)(dian)(dian)(dian)(dian)薄膜(mo)(mo)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)的(de)(de)(de)工(gong)作(zuo)溫(wen)度(du)(du)(du)要(yao)求也越來越高(gao)(gao)(gao)。因此研(yan)究(jiu)可(ke)應(ying)用于(yu)高(gao)(gao)(gao)溫(wen)環境的(de)(de)(de)高(gao)(gao)(gao)儲(chu)能(neng)(neng)(neng)密(mi)度(du)(du)(du)薄膜(mo)(mo)電(dian)(dian)(dian)(dian)(dian)介(jie)質對實(shi)現(xian)脈(mo)(mo)沖功(gong)率(lv)及電(dian)(dian)(dian)(dian)(dian)力電(dian)(dian)(dian)(dian)(dian)子設(she)(she)備(bei)用儲(chu)能(neng)(neng)(neng)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)的(de)(de)(de)小(xiao)型(xing)化(hua)、輕量化(hua)和(he)(he)集成(cheng)化(hua)有著重要(yao)的(de)(de)(de)科學研(yan)究(jiu)意(yi)(yi)義和(he)(he)實(shi)際應(ying)用價值(zhi)。電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)通常由(you)(you)電(dian)(dian)(dian)(dian)(dian)介(jie)質材料(liao)(liao)和(he)(he)兩個導(dao)(dao)體(ti)(ti)電(dian)(dian)(dian)(dian)(dian)極組成(cheng),呈平行板形式,如圖1.4所示。電(dian)(dian)(dian)(dian)(dian)能(neng)(neng)(neng)存儲(chu)是(shi)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)的(de)(de)(de)基(ji)礎功(gong)能(neng)(neng)(neng),電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)的(de)(de)(de)能(neng)(neng)(neng)量存儲(chu)能(neng)(neng)(neng)力(即電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong))僅由(you)(you)導(dao)(dao)體(ti)(ti)的(de)(de)(de)物理尺(chi)寸(幾(ji)何形狀)和(he)(he)電(dian)(dian)(dian)(dian)(dian)介(jie)質的(de)(de)(de)介(jie)電(dian)(dian)(dian)(dian)(dian)常數決定,與導(dao)(dao)體(ti)(ti)之間(jian)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)位差(cha)和(he)(he)導(dao)(dao)體(ti)(ti)上的(de)(de)(de)總電(dian)(dian)(dian)(dian)(dian)荷無關(guan)。為了彌補聚(ju)合物電(dian)(dian)(dian)(dian)(dian)介(jie)質介(jie)電(dian)(dian)(dian)(dian)(dian)常數不(bu)夠高(gao)(gao)(gao)的(de)(de)(de)缺點(dian),近(jin)幾(ji)十年來不(bu)同種(zhong)類(lei)的(de)(de)(de)納米填料(liao)(liao)被引入(ru)聚(ju)合物中制備(bei)聚(ju)合物基(ji)納米復合材料(liao)(liao),因此,研(yan)究(jiu)可(ke)應(ying)用于(yu)高(gao)(gao)(gao)溫(wen)環境的(de)(de)(de)高(gao)(gao)(gao)儲(chu)能(neng)(neng)(neng)密(mi)度(du)(du)(du)薄膜(mo)(mo)電(dian)(dian)(dian)(dian)(dian)介(jie)質對實(shi)現(xian)脈(mo)(mo)沖功(gong)率(lv)及電(dian)(dian)(dian)(dian)(dian)力電(dian)(dian)(dian)(dian)(dian)子設(she)(she)備(bei)用儲(chu)能(neng)(neng)(neng)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)的(de)(de)(de)小(xiao)型(xing)化(hua)、輕量化(hua)和(he)(he)集成(cheng)化(hua)有著重要(yao)的(de)(de)(de)科學研(yan)究(jiu)意(yi)(yi)義和(he)(he)實(shi)際應(ying)用價值(zhi)。

  實驗目的:電滯回線測試和(he)不同納米填料的PEI基復合儲能電介(jie)質(zhi)的擊穿(chuan)場(chang)強(qiang)擊穿(chuan)場(chang)強(qiang)測試為(wei)后續實驗做論證和(he)鋪墊。

  測試設備:ATA-7100高壓放大器、信號發生器、示波器

  實驗過程:首先由函數發(fa)生器激(ji)發(fa)頻率為10Hz的單極性三角波信號(hao),信號(hao)經由ATA-7100高壓(ya)放(fang)(fang)大(da)(da)器放(fang)(fang)大(da)(da)施(shi)加在樣品兩端,可通過放(fang)(fang)大(da)(da)器增益(yi)旋(xuan)鈕控制輸出電壓(ya),同時利用(yong)示波器觀察輸出電壓(ya)大(da)(da)小(xiao)。該(gai)放(fang)(fang)大(da)(da)器不僅可以(yi)輸出交流(liu)信號(hao),也可輸出直(zhi)流(liu)信號(hao),最大(da)(da)輸出交流(liu)信號(hao)20kVpp,最大(da)(da)輸出直(zhi)流(liu)電壓(ya)10kV,也可以(yi)用(yong)于(yu)擊穿(chuan)場(chang)強測試。其測試原(yuan)理圖如圖1-1

擊穿場強測試、電滯回線測試實驗框圖

  圖1-1:擊穿場強(qiang)測試、電(dian)滯回(hui)線(xian)測試實(shi)驗框圖

  實驗結果:不同(tong)納(na)(na)(na)(na)米(mi)(mi)(mi)填料(liao)的(de)(de)(de)PEI基(ji)納(na)(na)(na)(na)米(mi)(mi)(mi)復合(he)電(dian)介(jie)質(zhi)的(de)(de)(de)直流擊穿(chuan)(chuan)場(chang)強測試分(fen)析結果如圖1-2所(suo)示,不同(tong)納(na)(na)(na)(na)米(mi)(mi)(mi)填料(liao)的(de)(de)(de)PEI基(ji)納(na)(na)(na)(na)米(mi)(mi)(mi)復合(he)電(dian)介(jie)質(zhi)的(de)(de)(de)Eb和(he)(he)β值(zhi)(zhi)。隨著納(na)(na)(na)(na)米(mi)(mi)(mi)填料(liao)含(han)量的(de)(de)(de)增(zeng)加(jia),不同(tong)納(na)(na)(na)(na)米(mi)(mi)(mi)填料(liao)的(de)(de)(de)PEI基(ji)納(na)(na)(na)(na)米(mi)(mi)(mi)復合(he)電(dian)介(jie)質(zhi)的(de)(de)(de)Eb均(jun)呈現先增(zeng)大后減小的(de)(de)(de)規律。當填料(liao)含(han)量為(wei)(wei)(wei)3vol%時,PEI/SiO2和(he)(he)PEI/ZrO2納(na)(na)(na)(na)米(mi)(mi)(mi)復合(he)電(dian)介(jie)質(zhi)的(de)(de)(de)Eb達到(dao)最(zui)大值(zhi)(zhi),分(fen)別為(wei)(wei)(wei)595MV/m和(he)(he)610MV/m。PEI/TiO2納(na)(na)(na)(na)米(mi)(mi)(mi)復合(he)電(dian)介(jie)質(zhi)的(de)(de)(de)Eb在填料(liao)含(han)量為(wei)(wei)(wei)1vol%時達到(dao)最(zui)大值(zhi)(zhi),為(wei)(wei)(wei)524MV/m。此外,與(yu)純PEI的(de)(de)(de)β值(zhi)(zhi)(8.24)相比,不同(tong)納(na)(na)(na)(na)米(mi)(mi)(mi)填料(liao)的(de)(de)(de)PEI基(ji)納(na)(na)(na)(na)米(mi)(mi)(mi)復合(he)電(dian)介(jie)質(zhi)的(de)(de)(de)β值(zhi)(zhi)也有所(suo)增(zeng)加(jia),當填料(liao)含(han)量為(wei)(wei)(wei)3vol%時,PEI/SiO2、PEI/ZrO2和(he)(he)PEI/TiO2納(na)(na)(na)(na)米(mi)(mi)(mi)復合(he)電(dian)介(jie)質(zhi)的(de)(de)(de)β值(zhi)(zhi)分(fen)別為(wei)(wei)(wei)8.98,12.66和(he)(he)8.57。值(zhi)(zhi)得注(zhu)意的(de)(de)(de)是(shi),不同(tong)填料(liao)含(han)量的(de)(de)(de)PEI/ZrO2納(na)(na)(na)(na)米(mi)(mi)(mi)復合(he)電(dian)介(jie)質(zhi)的(de)(de)(de)β值(zhi)(zhi)均(jun)在10以(yi)上(shang),高(gao)β值(zhi)(zhi)反映了(le)其高(gao)的(de)(de)(de)擊穿(chuan)(chuan)穩定性。

不同填料含量的PEI基復合電介質擊穿場強的雙參數威布爾分布圖

  圖1-2:不(bu)同填料含量(liang)的PEI基復合(he)電介質擊穿場強(qiang)的雙(shuang)參(can)數威布爾(er)分布圖

  產品推薦:ATA-7100高(gao)壓放大器

ATA-7100高壓放大器指標參數

  圖:ATA-7100高壓放大器指標參數

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